JANTXV2N6849

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) PD-90550G IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849 100V, P-CHANNEL REF: MIL-PRF-19500/564 Product Summary Part Number BVDSS IRFF9130 -100V RDS(on) ID 0.30 -6.5A Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. TO-39 Features  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Parameter Value ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Op...