JDP2S04E

JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low capacitance ratio: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 mA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz Test Condition Weight: 0.0014 g (typ.) Min 50 ¾ ¾ ¾ ¾ Typ. ¾ ¾ 0.95 0.25 3.0 Max ¾ 0.1 1.0 0.4 ¾ Unit V mA V pF W Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking 1 2003-03-24 JDP2S04E 2 2003-03-24 JDP2S04E RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure o...