JDV2S02E

JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.) · · · Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight: 0.0014 g Min 10 ¾ 1.8 0.83 1.8 ¾ Typ. ¾ ¾ 2.05 1.03 2 0.6 Max ¾ 3 2.3 1.23 ¾ 0.8 Unit V nA pF ¾ W Note: Signal level when capacitance is measured. Vsig = 100 mVrms Marking FB 1 2002-01-16 JDV2S02E CV – VR 10 f = 1 MHz Vsig = 100 m Vrms 1.0 0.9 rs – VR f = 470 MHz (pF) (9) Series resistance rs 1 0.1 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Capacitance CV 1 2 3 4 5 6 7 0 0.1 1 10 Reverse voltage VR (V) Reverse voltage VR (V) 2 2002-01-16 JDV2S02E RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to...