JDV2S08S

JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight: 0.0011 g (typ.) Min 10 ¾ 17.3 5.3 2.8 ¾ Typ. ¾ ¾ 18.3 6.1 3 0.35 Max ¾ 3 19.3 6.6 ¾ 0.45 Unit V nA pF ¾ W Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking C 1 2002-01-23 JDV2S08S CV – VR 100 f = 1 MHz 50 Ta = 25°C 0.4 0.5 rs – VR f = 470 MHz Ta = 25°C (pF) 30 Series resistance rs 1 2 3 4 5 6 7 8 9 10 (9) Capacitance CV 0.3 10 5 3 0.2 0.1 1 0 0 0.1 0.3 1 3 10 Reverse voltage VR (V) Reverse voltage VR (V) dC – Ta (%) 4 f = 1 MHz VR = 1 V 2 2 4 6 0 Capacitance change Ratio @C -2 -4 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 2 2002-01-23 JDV2S08S RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor ...