JPAD1

PAD SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (PAD) Continuous Power Dissipation (J/SSTPAD) Maximum Currents Forward Current (PAD) Forward Current (J/SSTPAD) 50mA 10mA * Cathode tied to Case 300mW 350mW -65 to +150 °C -55 to +135 °C JPAD TO-92 BOTTOM VIEW A 1 3 PICO AMPERE DIODES BVR ≥ -30V Crss ≤ 2.0pF PAD1,2,5 TO-72 BOTTOM VIEW 2 PAD* TO-72 BOTTOM VIEW 2 K K* C A 1 SSTPAD SOT-23 TOP VIEW K 1 3 K 1 A 2 A K 2 COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVR VF Crss CHARACTERISTIC Reverse Breakdown Voltage Forward Voltage Total Reverse Capacitance PAD1,5 All Others ALL PAD ALL SSTPAD ALL JPAD MIN -45 -30 -35 0.8 0.5 1.5 1.5 0.8 2 pF V IR = -1µA IF = 5mA VR = -5V, f = 1MHz TYP MAX UNITS CONDITIONS SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC (SST/J)PAD1 (SST/J)PAD2 (SST/J)PAD5 IR Maximum Reverse 2 Leakage Current (SST/J)PAD10 (SST/J)PAD20 (SST/J)PAD50 (SST/J)PAD100 (SST/J)PAD200 (SST/J)PAD500 PAD2 -1 -2 -5 -10 -20 -50 -100 -5 -10 -20 -50 -100 -200 -500 -5 -10 -20 -50 pA VR = -20V JPAD2 SSTPAD2 UNITS CONDITIONS Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0...