K4R441869A-N(M)CK7

K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Direct RDRAM™ Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register On page 44 - Add the Tj value from TBD to Max. 100°C @ Table 18 On page 46 - Add the ΘJC value from TBD to 0.2°C/Watt @ Table 20 On page 55 - Add the current values for 356MHz and 300MHz RDRAM device Version 1.02 (January 2000) * Change the part number of RDRAM Component according to New Code System since ’00.Jan.1st On page 45 - Reduce swing of VIH,CMOS & VIL,CMOS from “0.5VCMOS±0.6V“ to “0.5VCMOS±0.4V“ - Relax tS1 from 1.0ns to “1.25ns“ ( But, Keep tH1 as 1.0ns) Page 0 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits ...