K4R881869

K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 K4R881869M Revision History Version 0.9 (January 2000) - Preliminary - First Copy - Based on the Rambus Datasheet 0.9ver. Preliminary Direct RDRAM™ Page 0 Rev. 0.9 Jan. 2000 K4R881869M Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and...