128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832C
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Mar. 2000
* Samsung Elec...
Description
K4S280832C
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Mar. 2000
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Mar. 2000
K4S280832C
Revision History
Revision 0.0 (March 21, 2000)
Changed tOH of K4S280432C-TC75/TL75 from 2.7ns to 3.0ns. Deleted -10 and -80 speed specification.
CMOS SDRAM
Rev. 0.0 Mar. 2000
K4S280832C
4M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S280832C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part No. K4S280832C-TC/L75 K4S280832C-TC...
Similar Datasheet