128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832M
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electr...
Description
K4S280832M
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S280832M
4M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S280832M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part No. K4S280832M-TC/L80 K4S280832M-TC/L1H K4S280832M-TC/L1L K4S280832M-TC/L10 Max Freq. 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL 54pin TSOP(II) InterPackage
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE LDQM
Data I...
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