Document
K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION
Part No. K4S56163PF-R(B)G/F75 K4S56163PF-R(B)G/F90 K4S56163PF-R(B)G/F1L Max Freq. 133MHz(CL3), 83MHz(CL2) 111MHz(CL3), 83MHz(CL2) 111MHz(CL3)*1, 66MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package
- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)
Notes : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization 16M x 16 Bank BA0, BA1 Row A0 - A12 Column Address A0 - A8
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September 2004
K4S56163PF - R(B)G/F
FUNCTIONAL BLOCK DIAGRAM
Mobile-SDRAM
I/O Control
LWE
Data Input Register Bank Select
LDQM
4M x 16 Sense AMP 4M x 16 4M x 16 4M x 16
Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register LRAS CLK CKE
CLK ADD
Column Decoder Col. Buffer
LRAS
LCBR
Latency & Burst Length
LCKE LCBR LWE LCAS
Programming Register LWCBR LDQM
Timing Register CS RAS CAS WE L(U)DQM
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K4S56163PF - R(B)G/F
Package Dimension and Pin Configuration < Bottom View*1 >
E1 9 A B C D1 D E F G H J E E/2 Pin Name D/2 D e A B C D E F G H J 8 7 6 5 4 3 2 1 1 VSS DQ14 DQ12 DQ10 DQ8 UDQM A12 A8 VSS
Mobile-SDRAM
< Top View*2 >
54Ball(6x9) FBGA 2 DQ15 DQ13 DQ11 DQ9 NC CLK A11 A7 A5 3 VSSQ VDDQ VSSQ VDDQ VSS CKE A9 A6 A4 7 VDDQ VSSQ VDDQ VSSQ VDD CAS BA0 A0 A3 8 DQ0 DQ2 DQ4 DQ6 LDQM RAS BA1 A1 A2 9 VDD DQ1 DQ3 DQ5 DQ7 WE CS A10 VDD
Pin Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground [Unit:mm]
*2: Top View
CLK CS CKE A0 ~ A12 A A1 BA0 ~ BA1 RAS CAS WE L(U)DQM
Substrate(2Layer)
b
z
*1: Bottom View < Top View*2 >
#A1 Ball Origin Indicator
DQ0 ~ 15 VDD/VSS VDDQ/VSSQ
SEC
Week XXXX
3
Symbol A A1 E E1 D D1 e b z
Min 1.00 0.27 0.45 -
Typ 1.10 0.32 8.0 6.40 11.0 6.40 0.80 0.50 -
Max 1.20 0.37 0.55 0.10
K4S56163PF
September 2004
K4S56163PF - R(B)G/F
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -1.0 ~ 2.6 -1.0 ~ 2.6
Mobile-SDRAM
Unit V V °C W mA
-55 ~ +150 1.0 50
NOTES: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial) Parameter Supply voltage VDDQ Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current VIH VIL VOH VOL ILI 1.7 0.8 x VDDQ -0.3 VDDQ -0.2 -2 1.8 1.8 0 1.95 VDDQ + 0.3 0.3 0.2 2 V V V V V uA 1 2 IOH = -0.1mA IOL = 0.1mA 3 Symbol VDD Min 1.7 Typ 1.8 Max 1.95 Unit V Note
NOTES : 1. VIH (max) = 2.2V AC.The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z outp.