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K4S563233FHN Dataheets PDF



Part Number K4S563233FHN
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4S563233FHN DatasheetK4S563233FHN Datasheet (PDF)

K4S563233F - F(H)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Functio.

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