64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632F
CMOS SDRAM
64Mbit SDRAM
1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Ele...
Description
K4S641632F
CMOS SDRAM
64Mbit SDRAM
1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.0.1 Sept. 2001
K4S641632F
Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001)
CMOS SDRAM
Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Rev.0.1 Sept. 2001
K4S641632F
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operatin...
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