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K6E0808C1E Dataheets PDF



Part Number K6E0808C1E
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 32K x 8 Bit High-Speed CMOS Static RAM
Datasheet K6E0808C1E DatasheetK6E0808C1E Datasheet (PDF)

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and a.

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K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 2.0 Feburary 1999 K6E0808C1E-C/E-L, K6E0808C1E-I/E-P 32K x 8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time 10, 12, 15ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.3V Device • Fully Static Operation - No Clock or Refresh required • Three State Outputs • 2V Minimum Data Retention : L-Ver. only • Standard Pin Configuration K6E0808C1E-J : 28-SOJ-300 K6E0808C1E-T : 28-TSOP1-0813. 4F For Cisco CMOS SRAM GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6E0808C1E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. PIN CONFIGURATION(Top View) OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 TSOP1 ORDERING INFORMATION K6E0808C1E-C10/C12/C15 K6E0808C1E-I10/I12/I15 Commercial Temp. Industrial Temp. FUNCTIONAL BLOCK DIAGRAM A14 1 A12 2 28 Vcc 27 WE 26 A13 25 A8 24 A9 23 A11 Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 Pre-Charge-Circuit A7 3 A6 4 A5 5 Row Select A4 6 Memory Array 512 Rows 64x8 Columns A3 7 A2 8 A1 9 A0 10 I/O1 11 SOJ 22 OE 21 A10 20 CS 19 I/O8 18 I/O7 17 I/O6 16 I/O5 15 I/O4 I/O1 ~I/O8 Data Cont. CLK Gen. I/O Circuit Column Select I/O2 12 I/O3 13 Vss 14 PIN FUNCTION A9 A10 A11 A12 A13 A14 Pin Name CS WE OE A0 - A14 WE CS OE I/O1 ~ I/O8 VCC VSS Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground -2- Revision 2.0 Feburary 1999 K6E0808C1E-C/E-L, K6E0808C1E-I/E-P ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to V SS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -40 to 85 For Cisco CMOS SRAM Unit V V W °C °C °C * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5** Typ 5.0 0 Max 5.5 0 VCC+0.5*** 0.8 Unit V V V V * The above parameters are also guaranteed at industrial temperature range. ** V IL(Min) = -2.0(Pulse Width ≤7ns) for I≤20mA. *** VIH (Max) = VCC+2.0V(Pulse Width≤7ns) for I≤20mA. DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C,VCC=5.0V±10% unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT = VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN = V IH or VIL, IOUT=0mA Min. Cycle, CS=VIH f=0MHz, CS≥VCC-0.2V, VIN≥VCC-0.2V or VIN≤0.2V IOL=8mA IOH=-4mA IOH1=0.1mA Normal L-Ver 10ns 12ns 15ns Standby Current ISB ISB1 Min -2 -2 2.4 Max 2 2 80 80 80 20 2 0.6 0.4 3.95 V V V mA mA Unit µA µA mA Output Low Voltage Level Output High Voltage Level VOL VOH VOH1** * The above parameters are also guaranteed at industrial temperature range. ** VCC=5.0V ±5%, Temp.=25°C. CAPACITANCE*(TA=25°C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN Max 8 7 Unit .


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