K6F1008V2C

K6F1008V2C Family Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Package Type : 48(36)-TBGA-6.00x7.00 to 32-TSOP1-0813.4F Finalize Draft Data November 27, 2001 December 13, 2001 Remark Preliminary Preliminary 1.0 June 12, 2002 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 June 2002 K6F1008V2C Family CMOS SRAM 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION The K6F1008V2C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. Process Technology: Full CMOS Organization: 128K x8 bit Power Supply Voltage: 3.0~3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 32-TSOP1-0813.4F PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5 µA2) Operating (ICC1, Max) 3mA PKG Type K6F1008V2C-F Industrial(-40~85 °C) 3.0~3.6V 551)/70...