K6F2008U2E-YF70

K6F2008U2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize Draft Date February 28, 2001 Remark Preliminary September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 September 2001 K6F2008U2E Family 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 256Kx8 Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Industrial(-40~85°C) Vcc Range Speed(ns) Standby (ISB1, Typ.) 0.5µA2) Operating (ICC1, Max) 2mA PKG Type K6F2008U2E-F 2.7~3.3V 551)/70ns 32-TSOP1-0813.4F 1. The parameter is measured with 30pF test load. 2. T...