256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E Family
Document Title
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision H...
Description
K6F2008V2E Family
Document Title
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 1.0 1.1 Initial draft Finalize
Draft Date
July 19 , 2001 September 27, 2001
Remark
Preliminary Final Final
Revised May 13, 2003 - Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.1 May 2003
K6F2008V2E Family
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES
Process Technology: Full CMOS Organization: 256Kx8 Power Supply Voltage: 3.0 ~ 3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)
CMOS SRAM
GENERAL DESCRIPTION
The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby (ISB1, Typ) 0.5µA2) Operating (ICC1, Max) 3mA PKG Type
K6F2008V2E-F
Industrial(-40~85°C)
3.0~3.6V
551)/70ns
...
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