K6F4016U6G-F

K6F4016U6G Family Document Title Preliminary CMOS SRAM 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date June 11, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 June 2003 K6F4016U6G Family FEATURES Preliminary CMOS SRAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current. 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 3µA2) Operating (ICC1, Max) 4mA PKG Type K6F4016U6G-F Industrial(-40~85°C) 2.7~3.3V 551)/70ns 48-TBGA-6.00x7.00 1. The parameter is measured with 30pF test load. 2. Typical value is measured...