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K6L0908C2A

Samsung semiconductor

64Kx8 bit Low Power CMOS Static RAM

K6L0908C2A Family Document Title 64Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 1...


Samsung semiconductor

K6L0908C2A

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Description
K6L0908C2A Family Document Title 64Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 1.0 2.0 History Initial draft Revision Finalize Revision - Add 45ns part with 30pf test load. Revision - Change Data Sheet format : One data sheets for industrial and commercial product Revision - Change Data Sheet format - Remove 45ns part from commercial product and 100ns part from industrial product - Remove low power part form TSOP package Draft Data Novemer 28, 1993 May 13, 1994 December 1, 1994 August 12, 1995 Remark Design target Preliminary Final Final 3.0 April 15, 1996 Final 4.0 January 9, 1998 Final The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 4.0 January 1997 K6L0908C2A Family 64Kx8 bit Low Power CMOS Static RAM FEATURES Process Technology: Poly Load Organization: 64Kx8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-SOP-525, 32-TSOP1-0820F CMOS SRAM GENERAL DESCRIPTION The K6L0908C2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also su...




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