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Alternative Device Available
K817P
Vishay Semiconductors
Optocoupler, Phototransistor Output
CE
1 AC
17918_13
C
17203-5
DESCRIPTION In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package.
AGENCY APPROVALS • BSI: EN 60065:2002, EN 60950-1:2006
• DIN EN 60747-5-2 (VDE 0884)
• FIMKO • UL file no. E52744 • cUL tested to CSA 22.2 bulletin 5A
FEATURES • Endstackable to 2.54 mm (0.1") spacing • DC isolation test voltage 5000 VRMS • Current transfer ratio (CTR) selected into
groups • Low temperature coefficient of CTR • Wide ambient temperature range • Available in single, dual and quad channel packages • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS • Programmable logic controllers • Modems • Answering machines • General applications
ORDERING INFORMATION
K8 1 7P# x
DIP
PART NUMBER
PACKAGE OPTION
7.62 mm
AGENCY CERTIFIED/
PACKAGE
5 mA
10 mA
CTR (%)
5 mA
VDE, BSI, FIMKO, UL, cUL
50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
DIP-4
K817P K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P8 K817P9
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
INPUT
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT
tp 10 μs
VR IF IFSM Pdiss Tj
Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature
tp/T = 0.5, tp 10 ms
VCEO VECO
IC ICM Pdiss Tj
VALUE
6 60 1.5 70 125
70 7 50 100 70 125
UNIT
V mA A mW °C
V V mA mA mW °C
Rev. 2.1, 23-May-13
1 Document Number: 83522
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Alternative Device Available
K817P
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature (1)
t=1s 2 mm from case, t 10 s
VISO Ptot Tamb Tstg Tsld
5000 200 - 40 to + 100 - 55 to + 125 260
VRMS mW °C °C °C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices.
Abs. Max. Output Pow.