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K817P1 Dataheets PDF



Part Number K817P1
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Optocoupler
Datasheet K817P1 DatasheetK817P1 Datasheet (PDF)

www.vishay.com Alternative Device Available K817P Vishay Semiconductors Optocoupler, Phototransistor Output CE 1 AC 17918_13 C 17203-5 DESCRIPTION In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package. AGENCY APPROVALS • BSI: EN 60065:2002, EN 60950-1:2006 • DIN EN 60747-5-2 (VDE 0884) • FIMKO • UL file no. E52744 • cUL tested to CSA 22.2 bulletin 5A FEATURES • Endstack.

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www.vishay.com Alternative Device Available K817P Vishay Semiconductors Optocoupler, Phototransistor Output CE 1 AC 17918_13 C 17203-5 DESCRIPTION In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package. AGENCY APPROVALS • BSI: EN 60065:2002, EN 60950-1:2006 • DIN EN 60747-5-2 (VDE 0884) • FIMKO • UL file no. E52744 • cUL tested to CSA 22.2 bulletin 5A FEATURES • Endstackable to 2.54 mm (0.1") spacing • DC isolation test voltage 5000 VRMS • Current transfer ratio (CTR) selected into groups • Low temperature coefficient of CTR • Wide ambient temperature range • Available in single, dual and quad channel packages • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Programmable logic controllers • Modems • Answering machines • General applications    ORDERING INFORMATION K8 1 7P# x DIP PART NUMBER PACKAGE OPTION 7.62 mm AGENCY CERTIFIED/ PACKAGE 5 mA 10 mA CTR (%) 5 mA VDE, BSI, FIMKO, UL, cUL 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 DIP-4 K817P K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P8 K817P9 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT tp  10 μs VR IF IFSM Pdiss Tj Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp  10 ms VCEO VECO IC ICM Pdiss Tj VALUE 6 60 1.5 70 125 70 7 50 100 70 125 UNIT V mA A mW °C V V mA mA mW °C Rev. 2.1, 23-May-13 1 Document Number: 83522 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Alternative Device Available K817P Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature (1) t=1s 2 mm from case, t  10 s VISO Ptot Tamb Tstg Tsld 5000 200 - 40 to + 100 - 55 to + 125 260 VRMS mW °C °C °C Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. Abs. Max. Output Pow.


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