K9F1208U0M-

K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 24th 2004 Remark Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY 64M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F1208Q0B-D,H K9F1208D0B-Y,P K9F1208D0B-D,H K9F1208U0B-Y,P K9F1208U0B-D,H K9F1208U0B-V,F 2.7 ~ 3.6V Vcc Range 1.70 ~ 1.95V 2.4 ~ 2.9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1 FEATURES Voltage Supply - 1.8V device(K9F1208Q0B) : 1.70~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.) Fast Write Cycle Time - Program time : ...