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K9F2808U0C-VIB0 Dataheets PDF



Part Number K9F2808U0C-VIB0
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
Datasheet K9F2808U0C-VIB0 DatasheetK9F2808U0C-VIB0 Datasheet (PDF)

K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V d.

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Document
K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F2808U0C-FCB0,FIB0 K9F2808Q0C-HCB0,HIB0 K9F2816U0C-HCB0,HIB0 K9F2816U0C-PCB0,PIB0 K9F2816Q0C-HCB0,HIB0 K9F2808U0C-HCB0,HIB0 K9F2808U0C-PCB0,PIB0 Some AC parameter is changed(K9F28XXQ0C). tWC tWH tWP tRC tREH tRP tREA tCEA Before After 45 60 15 20 25 40 50 60 15 20 25 40 30 40 45 55 Mar. 13rd 2003 Draft Date Apr. 15th 2002 Sep. 5th 2002 Remark Advance Advance 2.0 Dec.10th 2002 Preliminary 2.1 Mar. 6th 2003 2.2 2.3 Mar. 26th 2003 2.4 New definition of the number of invalid blocks is added. May. 24th 2003 (Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space) Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory PRODUCT LIST Part Number K9F2808Q0C-D,H K9F2816Q0C-D,H K9F2808U0C-Y,P K9F2808U0C-D,H K9F2808U0C-V,F K9F2816U0C-Y,P K9F2816U0C-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.7 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES • Voltage Supply - 1.8V device(K9F28XXQ0C) : 1.7~1.95V - 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V • Organization - Memory Cell Array - X8 device(K9F2808X0C) : (16M + 512K)bit x 8bit - X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit - Data Register - X8 device(K9F2808X0C) : (512 + 16)bit x 8bit - X16 device(K9F2816X0C) : (256 + 8)bit x16bit • Automatic Program and Erase - Page Program - X8 device(K9F2808X0C) : (512 + 16)Byte - X16 device(K9F2816X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F2808X0C) : (16K + 512)Byte - X16 device(K9F2816X0C) : ( 8K + 256)Word • Page Read Operation - Page Size - X8 device(K9F2808X0C) : (512 + 16)Byte - X16 device(K9F2816X0C) : (256 + 8)Word - Random Access : 10µs(Max.) - Serial Page Access : .


K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2808U0M-


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