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K9F5608U0B-HCB0 Dataheets PDF



Part Number K9F5608U0B-HCB0
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Datasheet K9F5608U0B-HCB0 DatasheetK9F5608U0B-HCB0 Datasheet (PDF)

K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don’ t care ==> A3 ~ A7 are "L" 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -ty.

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Document
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don’ t care ==> A3 ~ A7 are "L" 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 15. ---> WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 15. 0.3 1. X16 TSOP1 pin is changed. : #36 pin is changed from VccQ to N.C . 1. In X16 device, bad block information location is changed from 256th byte to 256th and 261th byte. 2. tAR1, tAR2 are merged to tAR.(page 12) (before revision) min. tAR1 = 20ns , min. tAR2 = 50ns (after revision) min. tAR = 10ns 3. min. tCLR is changed from 50ns to 10ns.(page12) 4. min. tREA is changed from 35ns to 30ns.(page12) 5. min. tWC is changed from 50ns to 45ns.(page12) 6. Unique ID for Copyright Protection is available -The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide identification capabilities. Detailed information can be obtained by contact with Samsung. 7. tRHZ is divide into tRHZ and tOH.(page 12) - tRHZ : RE High to Output Hi-Z - tOH : RE High to Output Hold 8. tCHZ is divide into tCHZ and tOH.(page 12) - tCHZ : CE High to Output Hi-Z - tOH : CE High to Output Hold Draft Date May. 15th 2001 Sep. 20th 2001 Remark Advance 0.2 Nov. 5th 2001 Feb. 15th 2002 0.4 Apr. 15th 2002 Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.5 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 33) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 34) The min. Vcc value 1.8V devices is changed. K9F56XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F5608U0B-FCB0,FIB0 K9F5608Q0B-HCB0,HIB0 K9F5616U0B-HCB0,HIB0 K9F5616U0B-PCB0,PIB0 K9F5616Q0B-HCB0,HIB0 K9F5608U0B-HCB0,HIB0 K9F5608U0B-PCB0,PIB0 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss Draft Date Nov. 22.2002 Remark 0.6 Mar. 6.2003 0.7 Mar. 13rd 2003 0.8 Apr. 4th 2003 0.9 May. 24th 2003 Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 2 K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory PRODUCT LIST Part Number K9F5608Q0B-D,H K9F5616Q0B-D,H K9F5608U0B-Y,P K9F5608U0B-D,H K9F5608U0B-V,F K9F5616U0B-Y,P K9F5616U0B-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES • Voltage Supply - 1.8V device(K9F56XXQ0B) : 1.70~1.95V - 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V • Organization - Memory Cell Array - X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit - X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit - Data Register - X8 device(K9F5608X0B) : (512 + 16)bit x 8bit - X16 .


K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0


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