ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work week 23 or after. Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60
UNIT : ns tREA 30 60 tCEA 45 75
Sincerely,
[email protected] Product Planning & Application Eng. Memory Division Samsung Electronics Co.
1
K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5616U0C-YCB0,YIB0,PCB0,PIB0 K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA The min. Vcc value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F5608U0C-FCB0,FIB0 K9F5608Q0C-HCB0,HIB0 K9F5616U0C-HCB0,HIB0 K9F5616U0C-PCB0,PIB0 K9F5616Q0C-HCB0,HIB0 K9F5608U0C-HCB0,HIB0 K9F5608U0C-PCB0,PIB0 Errata is added.(Front Page)-K9F56XXQ0C tWC tWH tWP tRC tREH tRP tREA tCEA Specification 45 15 25 50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) Jan. 17th 2003 Preliminary
Draft Date
Apr. 25th 2002 Dec.14th 2002
Remark
Advance Preliminary
2.1
Mar. 5th 2003
Preliminary
2.2
Mar. 13rd 2003
2.3
Mar. 26th 2003
2.4
Apr. 4th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
1
K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5616U0C-YCB0,YIB0,PCB0,PIB0 K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9F5608Q0C-D,H K9F5616Q0C-D,H K9F5608U0C-Y,P K9F5608U0C-D,H K9F5608U0C-V,F K9F5616U0C-Y,P K9F5616U0C-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA
FEATURES
• Voltage Supply - 1.8V device(K9F56XXQ0C) : 1.70~1.95V - 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V • Organization - Memory Cell Array - X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit - X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit - Data Register - X8 device(K9F5608X0C) : (512 + 16)bit x 8bit - X16 device(K9F5616X0C) : (256 + 8)bit x16bit • Automatic Program and Erase - Page Program - X8 device(K9F5608X0C) : (512 + 16)Byte - X16 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)Byte - X16 device(K9F5616X0C) : ( 8K + 256)Word • Page Read Operation - Page Size - X8 device(K9F5608X0C) : (512 + 16)Byte - X16 device(K9F5616X0C) : (256 + 8)Word - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection • Power-On Auto-Read Operation • Safe Lock Mechanism • Package - K9F56XXU0C-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F56XXX0C-DCB0/DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm) - K9F5608U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F56XXU0C-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Packag.