K9F5608U0C-FCB0

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work week 23 or after. Workaround : Relax the relevant timing parameters according to the table. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, [email protected] Product Planning & Application Eng. Memory Division Samsung Electronics Co. 1 K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0 K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5616U0C-YCB0,YIB0,PCB0,PIB0 K9F5616U0C-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. ...