SMBT3904PN
NPN/PNP Silicon Switching Transistor Array
High current gain Low collector-emitter saturation voltage T...
SMBT3904PN
NPN/
PNP Silicon Switching
Transistor Array
High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated
NPN/
PNP
4 5 6
Transistors in one package
2
Tape loading orientation
Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
EHA07193
3
1
VPS05604
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
C1 6 B2 5 E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07177
Type SMBT3904PN
Maximum Ratings Parameter
Marking s3P
Pin Configuration
Package
1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SOT363
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 250 150 -65 ... 150 mA mW °C Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Thermal Resistance
Thermal resistance, chip case1)
RthJC
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-21-2002
SMBT3904PN
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per
Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V...
