SMBT3904U
NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA Low collector-emitter saturati...
SMBT3904U
NPN Silicon Switching
Transistor Array
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated
Transistors
5 6
4
with good matching in one package
Complementary type: SMBT3906U (
PNP)
C1 6 B2 5 E2 4
3 2 1
VPW09197
TR2 TR1
1 E1
2 B1
3 C2
EHA07178
Type SMBT3904U
Maximum Ratings Parameter
Marking s1A
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg
Value 40 60 6 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 105 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point1) RthJS
135
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBT3904U
Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat...
