SMBT3906S

PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3906...MMBT3906 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U Marking Pin Configuration Package s2A 1=B 2=E 3=C - - - SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115°C, SOT363, MMBT3906S TS ≤ 107°C, SC74, MMBT3906U Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 6 200 330 250 330 150 -65 ... 150 ...