PNP Silicon Switching Transistor
High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage
q
SMBT ...
PNP Silicon Switching
Transistor
High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage
q
SMBT 4126
Type SMBT 4126
Marking sC3
Ordering Code (tape and reel) Q68000-A8549
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 25 25 4 200 330 150 – 65 … + 150
Unit V
mA mW ˚C
310 240
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBT 4126
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 50 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 50 mA, IB = 5 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Small-signal current...
