SMBT5087

SMBT5087 PNP Silicon Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30Hz and 15kHz 3 2 1 Pin Configuration VPS05161 Type SMBT5087 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 °C Junction temperature Storage temperature Marking s2Q 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 50 50 3 50 330 150 -65 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit K/W
240 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector -base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0 , TA = 150 °C DC current gain1) IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA AC Characteristics Transition frequency IC = 0.5 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Short-circuit forward current transf....