SMBT6429

NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Type SMBT 6428 SMBT 6429 Marking s1K s1L Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values SMBT 6428 SMBT 6429 50 60 45 55 6 200 330 150 – 65 … + 150 Unit V mA mW ˚C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 Collector-base breakdown voltage IC = 10 µA SMBT 6428 SMBT 6429 Emitter-base breakdown voltage IE = 1 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain IC = 10 µA, VCE = 5 V IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMB...