SMBTA06

SMBTA06/ MMBTA06 NPN Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA56 (PNP) 3 MMBTA56 (PNP) 2 1 VPS05161 Type SMBTA06/ MMBTA06 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Marking s1G 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Unit V mA A mA mW °C Total power dissipation , TS = 79 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-20-2002 SMBTA06/ MMBTA06 Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V VCEsat VBE(ON) hFE 100 100 0.25 1.2 V ICEO 100 nA ICBO 20 µA ICBO 100 nA V(BR)EBO 4 V(BR)CBO 80 V(BR)CEO 80 V Symbol min. Values typ. max. Unit AC Char...