SMBTA06M

SMBTA 06M NPN Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA 56M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 06M Marking Ordering Code Pin Configuration s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W °C mA A mA Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤110 ≤55 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-08-1998 1998-11-01 SMBTA 06M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 100 20 100 Unit V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE 80 80 4 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0 Collector cutoff current V nA µA nA - VCB = 80 V, I E = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, I B = 0 DC current gain 1) I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-em...