SMBTA06U

SMBTA06U NPN Silicon AF Transistor Array
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA56U (PNP)
Two ( galvanic) internal isolated Transistors 5 6 4 3 2 1 VPW09197 with good matching in one package C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07178 Type SMBTA06U Maximum Ratings Parameter Marking s1G Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 115 °C Junction temperature Storage temperature mA A mA mW °C Thermal Resistance Junction - soldering point1) RthJS
105 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA06U Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 80 80 4 - - 100 20 100 V nA µA nA - Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-em...