NPN Silicon Darlington Transistor
• High collector current • Low collector-emitter saturation voltage • Pb-free (RoHS co...
NPN Silicon Darlington
Transistor
High collector current Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101
SMBTA14/MMBTA14
32 1
Type SMBTA14/MMBTA14
Marking s1N
Pin Configuration 1=B 2=E 3=C
Package SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 81 °C Junction temperature Storage temperature
VCES VCBO VEBO IC ICM IB IBM Ptot
Tj Tstg
30 30 10 300 500 100 200 330
150 -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 210
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA
mW °C
Unit K/W
1 2011-12-19
SMBTA14/MMBTA14
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. ty...
