SMBTA42M

SMBTA42M NPN Silicon High-Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA92M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA42M Maximum Ratings Parameter Marking s1D 1=B Pin Configuration 2=C 3=E Package 4=n.c. 5 = C SCT595 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 6 500 100 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS
83 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS
45 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA42M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 300 300 6 - - 100 20 100 V nA µA nA...