SMBTA 56M
PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary ...
SMBTA 56M
PNP Silicon AF
Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA 06M (
NPN)
4 5 3 2 1
VPW05980
Type SMBTA 56M
Marking Ordering Code Pin Configuration s2G Q62702-A3474
Package
1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W °C mA A mA Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤110 ≤55
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Au 1998-11-01 -11-1998
SMBTA 56M
Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage typ. max. 100 20 100
Unit
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE
80 80 4 -
V
I C = 1 mA, I B = 0
Collector-base breakdown voltage
I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0
Collector cutoff current
V nA µA nA -
VCB = 80 V, I E = 0 , TA = 150 °C
Collector cutoff current
VCE = 60 V, I B = 0
DC current gain 1)
I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V
Collector-em...