SMBTA63, SMBTA64
PNP Silicon Darlington Transistors
High collector current High DC current gain
3
2 1
VPS05161
Ty...
SMBTA63, SMBTA64
PNP Silicon Darlington
Transistors
High collector current High DC current gain
3
2 1
VPS05161
Type SMBTA63 SMBTA64
Maximum Ratings Parameter
Marking s2U s2V 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 30 30 10 500 800 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 81 °C Junction temperature Storage temperature
mA A mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
210
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA63, SMBTA64
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics VBEsat 2 SMBTA63 SMBTA64 SMBTA63 SMBTA64 VCEsat hFE 5000 10000 10000 20000 1.5 IEBO 100 ICBO 10 I...
