PNP Silicon Transistor
For AF input stages and driver applications q High current gain q Low collector-emitter saturatio...
PNP Silicon
Transistor
For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage
q
SMBTA 70
Type SMBTA 70
Marking s2C
Ordering Code (tape and reel) Q62702-M0003
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VEB0 IC ICM IBM Ptot Tj Tstg
Values 40 4 100 200 100 330 150 – 65 … + 150
Unit V mA
mW ˚C
310 240
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 70
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo 125 – – – – 4 MHz pF V(BR)CE0 V(BR)EB0 ICB0 – – IEB0 hFE VCEsat – 40 – – – – – – 100 20 20 400 0.25 ...
