SM3JZ47

SM3GZ47,SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47,SM3JZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current : IT (RMS) = 3A l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM3GZ47 SM3JZ47 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 RATING 400 600 3 30 (50Hz) 33 (60Hz) 4.5 50 5 0.5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 R.M.S On−State Current (Full Sine Waveform Tc = 110°C) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value (t = 1~10ms) Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-13 SM3GZ47,SM3JZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt ITM = 4.5A VD = Ra...