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SM5818

Formosa MS

MELF Schottky Barrier Diodes

MELF Schottky Barrier Diodes SM5817 THRU SM5819 Silicon epitaxial planer type Formosa MS SM-1 Features Plastic packag...


Formosa MS

SM5818

File Download Download SM5818 Datasheet


Description
MELF Schottky Barrier Diodes SM5817 THRU SM5819 Silicon epitaxial planer type Formosa MS SM-1 Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. .205(5.2) .190(4.8) .024(.60) .018(.46) SOLDERABLE ENDS Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. .105(2.7) .095(2.4) Mechanical data Case : Molded plastic, SM-1 (MELF) Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.015 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 25 1.0 10 Rq JA CJ TSTG -55 80 110 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE - V RRM (V) *1 V RMS (V) 14 21 28 *2 VR *3 VF *4 Operating temperature ( o C) *1 Repetitive peak reverse voltage *2 RMS voltage (V) 20 30 40 (V) 0.45 0.55 0.60 SM5817 SM5818 SM5819 20 30 40 -55 to +125 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (SM581...




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