50 ohm / 50ohm Low Noise Amplifier
SMA427A
50 Ω / 50 Ω Low Noise Amplifier
PRELIMINARY DATA
• CASCADABLE 50 ohm-GAIN BLOCK • UNCONDITIONALLY STABLE • GAIN...
Description
SMA427A
50 Ω / 50 Ω Low Noise Amplifier
PRELIMINARY DATA
CASCADABLE 50 ohm-GAIN BLOCK UNCONDITIONALLY STABLE GAIN |S21|2 = 17 dB at 1.8 GHz IP3out = +7.4 dBm at 1.575 GHz (VD = 3 V, ID = 9.5 mA) NOISE FIGURE NF = 2.2 dB at 1.8 GHz TYPICAL DEVICE VOLTAGE VD = 2 V to 5 V ULTRA MINIATURE SOT323-4L PACKAGE (LEAD FREE) APPLICATIONS LNA FOR 1-2 GHz APPLICATIONS (GPS, Cellular..)
SOT323-4L (SC70) ORDER CODE SMA427ATR BRANDING TBD
BLOCK DIAGRAM
3 +V
DESCRIPTION SMA427A is a product of the SMA Family (Silicon MMIC Amplifiers). Housed in the ultra miniature 4-lead SC-70 (SOT323-4L LEAD FREE) surface mount plastic package, it embeds the state of the art Silicon ST technology. The amplifier application shows excellent RF performance using only two external component in the 1000-2000MHz frequency range.
4
OUT
IN
1
2 GND
ABSOLUTE MAXIMUM RATINGS
Symbol VD ID Ptot PRFin Tamb Tstg Tj Device Voltage Device Current Total dissipation, Ts = 120 C
o
Parameter
Value 6 27 TBD -10 -65 to +150 -65 to +150 150
Unit V mA mW dBm
o o o
RF Input Power Ambient Temperature Storage temperature Max. operating junction temperature
C C C
THERMAL RESISTANCE
Rthjs Thermal Resistance Junction soldering point TBD
o
C/W
January, 7 2003
1/6
SMA427A
ELECTRICAL CHARACTERISTICS (Ta = +25oC, VD = 3V, Zo = 50Ω, tested in circuit shown in Appl.1, unless otherwise specified)
Symbol Id |S21|2 Parameter Supply Current Insertion power gain f = 1 GHz f = 1.575 GHz f = 1.8 GHz f = 1 GHz f = 1.575...
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