MOS FET Array
MOS FET Array SMA5113
122
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
450
V
VGSS
±30
V
ID
±...
Description
MOS FET Array SMA5113
122
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
450
V
VGSS
±30
V
ID
±7
A
ID (pulse) *1
±28
A
4 (Ta=25ºC, All circuits operate, No Fin) W
PT
35 (Tc=25ºC, All circuits operate, ∞ Fin) W
EAS *2
130
mJ
IAS
7
A
j-a
31.2
Junction - Ambientare, Ta=25ºC, All circuits operate
ºC/W
j-c
3.57
Junction - Case, Ta=25ºC, All circuits operate
ºC/W
Tch
150
ºC
Tstg
–55 to +150
ºC
*1 PW 100µs, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped,
RG = 50Ω
Electrical Characteristics
Symbol
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD
Test Conditions
ID = 100µA, VGS = 0V VGS = ±30V
VDS = 450V, VGS = 0V
VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A
VDS = 10V f = 1.0MHz VGS = 0V
ID = 3.5A VDD 200V RL = 57Ω VGS = 10V RG = 50Ω
ISD = 7A, VGS = 0V
(Ta=25ºC)
Ratings min typ max Unit
450
V
±100 nA
100 µA
2.0
4.0 V
3.5 5.0
S
0.84 1.1 Ω
720
pF
150
pF
65
pF
25
ns
40
ns
70
ns
50
ns
1.0 1.5 V
External Dimensions SMA (LF1000)
10.2±0.2 2.4
(10.4)
31.0±0.2
4.0±0.2 2.5±0.2
b
30º
a
11 P2.54±0.1=27.94
1.21±0.15 1.46±0.15
0.85
+0.2 –0.1
0.55
+0.2 –0.1
1.2±0.1
31.5 max (Including both-side resin burr)
1 2 3 4 5 6 7 8 9 10 11 12
a) Part No. b) Lot No.
(Unit: mm)
■ ID — VDS Characteristics
7 10V
6
5
ID (A)
4
3
2 1
0
0
5
10
VDS (V)
5.5V
5V VGS = 4.5V
15
20
■ ID — VGS Characteristics
7
6
VDS = 20V
5
ID (A)
4
3
2
Ta = –55ºC...
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