SMA5114

SMA5114 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* IAS PT Ratings 60 ±20 ±3 ±6 (PW≤1ms, Du≤1%) 6.8 3 N-channel With built-in flywheel diode (Ta=25°C) External dimensions B SMA Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr Specification min typ max 60 ±10 100 1.0 2.5 1.0 2.3 0.20 0.25 0.25 0.30 170 130 20 80 170 330 150 1.0 1.5 80 Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns V ns (Ta=25°C) Unit V V A A mJ A W W °C/W °C/W °C °C Conditions ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=10V, f=1.0MHz, VGS=0V ID=1A, VDD 30V, RL=30Ω, VGS=5V, see Fig. 3 on page 16. ISD=3A, VGS=0V ISD=±100mA θ j–a θ j–c Tch Tstg 4 (Ta=25°C, with all circuits operating, without heatsink) 28 ((Tc=25°C,with all circuits operating, with infinite heatsink) 31.2 (Junction-Air, Ta=25°C, with all circuits operating) 4.46 (Junction-Case, Tc=25°C, with all circuits operating) 150 –40 to +150 * : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 2 3 4 9 10 11 qDiode for flyback voltage absorption Symbol min 120 Specification typ max 1.0 100 1.2 10 Unit V V µA ns Conditions IR=10µA IF=1A VR=120V IF=±100mA 1 5 8 12 6 7 VR VF IR trr Characteristic curves ID-VDS Characteristics (Typical) 3 10V 3.4V ID-VGS Characteristics (Typical) (VDS=10V) 3 RDS(ON)-ID Characteristics (Typical) 0.5 0.4 (W) 2 2 ID (A...