SKW07N120

SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  Lower Eoff compared to previous generation  Short circuit withstand time – 10 s C  Designed for: - Motor controls - Inverter G E - SMPS  NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Qualified according to JEDEC1 for target applications PG-TO-247-3  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 VCE 1200V IC 8A Eoff 0.7mJ Tj Marking Package 150C K07N120 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter vo...