SI7456DP

Si7456DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 6.0 V ID (A) 9.3 8.8 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V, Full-/Half-Bridge DC/DC D Industrial and 42-V Automotive PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7456DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.1 0 1 mH TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 10 secs 100 "20 9.3 6.7 40 30 45 4.3 5.2 2.7 Steady State Unit V 5.7 4.1 A mJ 1.6 1.9 1.0 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71603 S-31989—Rev. D, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W 1 Si7456DP Vi...