Complementary 30-V (D-S) MOSFET
Si7501DN
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
P-Channel −30
FEATURES
rDS(on) (W)
0...
Description
Si7501DN
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
P-Channel −30
FEATURES
rDS(on) (W)
0.051 @ VGS = −10 V 0.075 @ VGS = −6 V 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V
ID (A)
−6.4 −5.3 7.7 6.5
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Backlight Inverter D DC/DC Converter − 4-Cell Battery
N Channel N-Channel
30
PowerPAK 1212-8
S1
3.30 mm
S1 1 2 G1 3
3.30 mm
S2 4 G2
G1
D
D 8 7 D 6 D 5 D
G2
Bottom View Ordering Information: Si7501DN-T1—E3
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
P-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
N-Channel 10 secs Steady State
30 "20
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−30 "25
Unit
V
−6.4 −5.1 −25 −2.6 3.1 3
−4.5 −3.6
7.7 4.7 25
5.4 4.3 A
−1.3 1.6 1.0 −55 to 150
2.6 3.1 2
1.3 1.6 1.0 W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Case) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
32 65 5
Maximum
40 81 6.3
Unit
_C/W
1
Si7501DN
Vishay Siliconix
SPE...
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