SI8402DB

20 V N-Channel 1.8 V (G-S) MOSFET Si8402DB Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.039 at VGS = 2.5 V 0.043 at VGS = 1.8 V ID (A) 7.3 7.1 6.8 MICRO FOOT Bump Side View Backside View 3 D 2 D 8402 xxx S 4 G 1 Device Marking: 8402 xxx = Date/Lot Traceability Code Ordering Information: Si8402DB-T1-E1 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PA, Battery and Load Switch for D Portable Devices G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 7.3 5.3 5.9 4.3 A IDM 30 Continuous Source Current (Diode Conduction)a IS 2.3 1.2 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.77 1.47 1.77 0.94 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsb IR/Convection 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t5s Steady State Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. Refer to IPC/JEDEC (J-STD-020), no ma...