P-Channel 60-V (D-S)/ 175C MOSFET
Si9407AEY
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
–60
rDS(on) (W)
0.120 @ VGS = –1...
Description
Si9407AEY
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
–60
rDS(on) (W)
0.120 @ VGS = –10 V 0.15 @ VGS = –4.5 V
ID (A)
"3.5 "3.1
S S S
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
D D D D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–60 "20 "3.5 "3.0 "30 –2.5 3.0
Unit
V
A
W 2.1 –55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70742 S-99445—Rev. C, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
50
Unit
_C/W
2-1
Si9407AEY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –-60 V, VGS = 0 V VDS = –-60 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 3.5 A VGS = –4.5 V, ID = 3.1 A VDS = –15 V, ID = –3.5 A IS = –2.5 A, VGS = 0 V 8 –1.2 –20 0.120 0.150 –1 ...
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