SI9410BDY

N-Channel 30-V (D-S) MOSFET Si9410BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.024 at VGS = 10 V 0.033 at VGS = 4.5 V ID (A) 8.1 6.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si9410BDY-T1-E3 (Lead (Pb)-free) Si9410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 8.1 6.2 6.5 5.0 Pulsed Drain Current (10 µs Pulse Width) IDM 30 Continuous Source Current (Diode Conduction)a IS 2.1 1.2 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.6 1.5 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 40 70 20 Maximum 50 85 24 Unit °C/W Document Number: 72269 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si9410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS =...