SI9420DY

Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(ON) (W) 1.0 @ VGS = 10 V ID (A) "1.0 D D D D SO-8 N/C S S G 1 2 3 4 Top View S S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)A Maximum Power Dissipation Dissi ationA Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IAS EAS IS PD TJ, Tstg LIMIT 200 "20 "1.0 "0.8 "10 5 1.3 1.0 2.5 W 1.6 –55 to 150 _C mJ A A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70123. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 50 UNIT _C/W 1 Si9420DY Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentB Drain-Source On-State ResistanceB Forward TransconductanceB Diode Forward VoltageB DYNAMICA T...